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Brand Name : Infineon
Model Number : IRFZ44NSTRLPBF
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 55 V
Current - Continuous Drain (Id) @ 25°C : 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 17.5mOhm @ 25A, 10V
IRFZ44NSTRLPBF MOSFET Power Electronics N-Channel Low-profilethrough-hole(IRFZ44NL) Package TO-263
|   			 FET Type   			 |   			  			 |   		|
|   			 Technology   			 |   			  			 MOSFET (Metal Oxide)   			 |   			  			 |   		
|   			 Drain to Source Voltage (Vdss)   			 |   			  			 |   		|
|   			 Current - Continuous Drain (Id) @ 25°C   			 |   			  			 |   		|
|   			 Drive Voltage (Max Rds On, Min Rds On)   			 |   			  			 10V   			 |   			  			 |   		
|   			 Rds On (Max) @ Id, Vgs   			 |   			  			 17.5mOhm @ 25A, 10V   			 |   			  			 |   		
|   			 Vgs(th) (Max) @ Id   			 |   			  			 4V @ 250µA   			 |   			  			 |   		
|   			 Gate Charge (Qg) (Max) @ Vgs   			 |   			  			 63 nC @ 10 V   			 |   			  			 |   		
|   			 Vgs (Max)   			 |   			  			 ±20V   			 |   			  			 |   		
|   			 Input Capacitance (Ciss) (Max) @ Vds   			 |   			  			 1470 pF @ 25 V   			 |   			  			 |   		
|   			 FET Feature   			 |   			  			 -   			 |   			  			 |   		
|   			 Power Dissipation (Max)   			 |   			  			 3.8W (Ta), 94W (Tc)   			 |   			  			 |   		
|   			 Operating Temperature   			 |   			  			 -55°C ~ 175°C (TJ)   			 |   			  			 |   		
|   			 Mounting Type   			 |   			  			 |   		|
|   			 Supplier Device Package   			 |   			  			 D2PAK   			 |   			  			 |   		
|   			 Package / Case   			 |   			
Advanced Process Technology
  Surface Mount(IRFZ44NS)
  Low-profilethrough-hole(IRFZ44NL)
  175°c Operating Temperature
  Fast Switching
  FullyAvalanche Rated
  Lead-Free
Description
  AdvancedHEXFETP PowerMOSFETs from InternationalRectifier utilizeadvanced processing techniques to achieveextremelylow on-resistance per silicon area. This benefitcombined with the fast switching speed and ruggedizeddevicedesign thatHEXFET powerMOSFETsarewell knownfor, provides the designer with an extremely efficient andreliable device for use in a wide variety of applications.
  The D~Pak is a surface mount power package capable ofaccommodatingdie sizes uptoHEX 4. tprovides thehighestpower capability and the lowest possible on-resistance inany existing surfacemount package. The D?Pak is suitablefor high current applications because of its low internalconnection resistance and can dissipate up to 2.0W in atypical surface mount application.The through-hole version (IRFZ44NL)is available for lowprofile applications.

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                        IRFZ44NSTRLPBF MOSFET Power Electronics N-Channel Low-profilethrough-hole(IRFZ44NL) Package TO-263 Images |